IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 28, NO. 10, OCTOBER 2013, 4500 – 4510
This paper deals with a new family of high boost voltage inverters that improve upon the conventional trans-Z-source and trans-quasi-Z-source inverters. The improved trans-Z-source inverter provides continuous input current and a higher boost voltage inversion capability. In addition, the improved inverter can suppress resonant current at startup, which might destroy the device. In comparison to the conventional trans-Z-source/-trans-quasi-Z-source inverters, for the same transformer turn ratio and input and output voltages, the improved inverter has a higher modulation index with reduced voltage stress on the dc link, lower current stress flow on the transformer windings and diode, and lower input current ripple. In order to produce the same input and output voltage with the same modulation index, the improved inverter uses a lower transformer turn ratio compared to the conventional inverters. Thus, the size and weight of the transformer in the improved inverter can be reduced. This paper presents the operating principles, analysis and simulation results, and compares them with those of the conventional trans-Z-source/-quasi-Z-source inverters. To verify the performance of the improved converter, a laboratory prototype was constructed based on a TMS320F2812 digital signal processor with 100 Vdcinput and 115 Vrms output voltage.
Index Terms—Boost inversion ability, shoot-through state, transZ-source inverter, transformer, Z-source inverter